On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
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90 results for Jack Y. C. Sun
IIA-3 p+ Polysilicon Emitters for Sub-0.5 µm High-Performance p-n-p
- J. Warnock
- J.Y.-C. Sun
- et al.
- 1992
- IEEE T-ED
IIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- E.F. Crabbé
- D.L. Harame
- et al.
- 1992
- IEEE T-ED
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Identification Of Perimeter Depletion And Emitter Plug Effects In Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors
- Joachim N. Burghartz
- Jack Yuan-Chen Sun
- et al.
- 1992
- IEEE T-ED
Device design issues for a high-performance technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- Microelectronic Engineering
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
Ultrathin oxide-nitride-oxide films
- Z.A. Weinberg
- K. Stein
- et al.
- 1990
- Applied Physics Letters
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
Avalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED