HIGH TEMPERATURE PROCESS LIMITATIONS ON TiSi//2.
- C.-Y. Ting
- F.M. d'Heurle
- et al.
- 1984
- ECS Meeting 1984
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15 results for Peter M. Fryer
AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
- Subramanian S. Iyer
- C.-Y. Ting
- et al.
- 1983
- VLSI Science and Technology 1983
AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
- Subramanian S. Iyer
- C.-Y. Ting
- et al.
- 1983
- ECS Meeting 1983
Ambient Gas Effects on the Reaction of Titanium with Silicon
- Subramanian S. lyer
- Chung-Yu Ting
- et al.
- 2019
- JES
High temperature process limitation on TiSi2
- C.-Y. Ting
- F.M. d'Heurle
- et al.
- 2019
- JES
Interfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si
- S.-E. Hörnström
- A. Charai
- et al.
- 2004
- Surface and Interface Analysis
Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
- Karen Holloway
- Peter M. Fryer
- et al.
- 1992
- Journal of Applied Physics
Tantalum as a diffusion barrier between copper and silicon
- Karen Holloway
- Peter M. Fryer
- 1990
- Applied Physics Letters
Chemical sputtering of Al2O3 by fluorine-containing plasmas excited by electron cyclotron resonance
- Y.H. Lee
- Z.H. Zhou
- et al.
- 1990
- Journal of Applied Physics
Room-temperature oxidation of silicon catalyzed by Cu3Si
- J.M.E. Harper
- A. Charai
- et al.
- 1990
- Applied Physics Letters