Diffusion versus oxidation rates in silicon-germanium alloys
- J. Eugène
- F.K. LeGoues
- et al.
- 1991
- Applied Physics Letters
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111 results for F.K. LeGoues
Defect self-annihilation in surfactant-mediated epitaxial growth
- M. Horn-Von Hoegen
- F. Legoues
- et al.
- 1991
- Physical Review Letters
Hydrogen segregation and trapping in the Al/Si(111) interface
- Joyce C. Liu
- A.D. Marwick
- et al.
- 1991
- Physical Review B
Anomalous strain relaxation in SiGe thin films and superlattices
- F. Legoues
- B.S. Meyerson
- et al.
- 1991
- Physical Review Letters
Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
Microstructure and strain relief of Ge films grown layer by layer on Si(001)
- F. Legoues
- M. Copel
- et al.
- 1990
- Physical Review B
Magnetically filtered low-loss scanning electron microscopy
- Oliver C. Wells
- Francoise K. LeGoues
- et al.
- 1990
- Applied Physics Letters
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Surface-stress-induced order in SiGe alloy films
- F. Legoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters