T.F. Kuech, B.S. Meyerson, et al.
Applied Physics Letters
We employed high-resolution double-crystal x-ray diffraction and transmission electron microscopy to characterize Si/Si1-xGe x strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique. Rocking curve analyses showed uniform layer thickness and alloy composition across superlattices of 10 periods. Extensive dynamical x-ray simulation indicated that heterointerfaces were abrupt and the Si layer was found to be 206±5 Å thick and SiGe layer was 8.25% Ge and 185±5 Å thick. The thickness values were confirmed by the cross-sectional transmission electron microscopy. A tilt angle of 26 arcsec was observed between the (001) planes in the superlattice and the substrate, resulting from steps on the surface of 〈100〉 2° off oriented Si substrates.
T.F. Kuech, B.S. Meyerson, et al.
Applied Physics Letters
D.L. Harame, J.M.C. Stork, et al.
IEDM 1993
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989
M.A. Tischler, H. Baratte, et al.
Journal of Crystal Growth