A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
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8 results for J.R. Lloyd
1f noise and grain-boundary diffusion in aluminum and aluminum alloys
- R.H. Koch
- J.R. Lloyd
- et al.
- 1985
- Physical Review Letters
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
New models for interconnect failure in advanced IC technology
- J.R. Lloyd
- 2008
- IPFA 2008
Line edge roughness and spacing effect on low-k TDDB characteristics
- F. Chen
- J.R. Lloyd
- et al.
- 2008
- IRPS 2008
BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process
- T. Iijima
- Q. Lin
- et al.
- 2006
- IITC 2006
Electromigration-induced vacancy behavior in unpassivated thin films
- J.R. Lloyd
- R.H. Koch
- 1992
- Journal of Applied Physics
Study of electromigration-induced resistance and resistance decay in Al thin-film conductors
- J.R. Lloyd
- R.H. Koch
- 1988
- Applied Physics Letters