Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
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73 results for G. Scilla
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
TOF-SIMS study of imidization of polyimide films
- B.N. Eldridge
- W. Reuter
- et al.
- 1989
- ACS PMSE 1989
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Ion beam enhanced diffusion of B during Si molecular beam epitaxy
- P.R. Pukite
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters
Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure rf glow discharges
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- 1989
- Radiation Effects and Defects in Solids
Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters
Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si
- P. Fahey
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters