Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
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73 results for G. Scilla
Silicide formation and dopant diffusion in silicon
- M. Wittmer
- P. Fahey
- et al.
- 1992
- Physical Review B
Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Electronic Materials
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters
Diffusion of dopants in tungsten disilicide: effects of diffusion paths
- O. Thomas
- G. Scilla
- et al.
- 1991
- Applied Surface Science
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth