Publications

73 results for G. Scilla

63-75 GHz f_T SiGe-base heterojunction bipolar technology
- - G.L. Patton
  - J.H. Comfort
  - et al.
- 1990
- VLSI Technology 1990
Process damage and contamination effects for shallow Si implanted GaAs
- - H. Barratte
  - G. Scilla
  - et al.
- 1989
- ECS Meeting 1989
TOF-SIMS study of imidization of polyimide films
- - B.N. Eldridge
  - W. Reuter
  - et al.
- 1989
- ACS PMSE 1989
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂
- - N.I. Buchan
  - T.F. Kuech
  - et al.
- 1990
- Journal of Electronic Materials
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- - Gary L. Patton
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure rf glow discharges
- - Gottlieb S. Oehrlein
  - Gerald J. Scilla
- 1989
- Radiation Effects and Defects in Solids
Reaction of titanium with germanium and silicon-germanium alloys
- - O. Thomas
  - S.L. Delage
  - et al.
- 1989
- Applied Physics Letters
Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si
- - P. Fahey
  - Subramanian S. Iyer
  - et al.
- 1989
- Applied Physics Letters
Shallow p⁺ junction formation by a reverse-type dopant preamorphization scheme
- - E. Ganin
  - B. Davari
  - et al.
- 1989
- Applied Physics Letters