POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
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8 results for J.T. Wetzel
LPCVD TUNGSTEN SILICIDE WITH TITANIUM UNDERLAYER.
- R.V. Joshi
- L. Krusin-Elbaum
- et al.
- 1985
- VLSI Technology 1985
Solute effect of arsenic on the microstructure and diffusion mechanism in platinum-silicides
- M. Wittmer
- J.T. Wetzel
- et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Calculated structures for [001] symmetrical tilt grain boundaries in silicon
- A.A. Levi
- D.A. Smith
- et al.
- 1991
- Journal of Applied Physics
On the preparation of cross-sectional TEM samples using lithographic processing and reactive ion-etching
- J.T. Wetzel
- M. Jost
- et al.
- 1989
- Ultramicroscopy
Effect of excess silicon on behavior of LPCVD WSix films on silicon
- R.V. Joshi
- Young H. Kim
- et al.
- 1988
- Thin Solid Films
Resistivity of AuIn2+δ thin films
- A.A. Bright
- J.T. Wetzel
- 1986
- Journal of Applied Physics
Observation and interpretation of the atomic structure of a [Sgrave] = 19/[110] (331) tilt boundary in Au thin films
- W. Krakow
- J.T. Wetzel
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties