113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
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18 results for Andrew C. Megdanis
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
Digital FIR Filters for High Speed PRML Disk Read Channels
- Richard L. Galbraith
- Scott K. Reynolds
- et al.
- 1995
- IEEE Journal of Solid-State Circuits
Custom design of CMOS low-power high-performance digital signal-processing macro for hard-disk-drive applications
- Hyun J. Shin
- D.J. Pearson
- et al.
- 1995
- IBM J. Res. Dev
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
- L. Dori
- A.C. Megdanis
- et al.
- 1990
- Thin Solid Films
In Situ Arsenic-Doped Polysilicon for VLSI Applications
- Maurizio Arienzo
- Andrew C. Megdanis
- et al.
- 1986
- IEEE T-ED