A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
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21 results for Michael R. Polcari
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar Transistors
- Denny Duan-Lee Tang
- Tze-Chiang Chen
- et al.
- 1989
- IEEE T-ED
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
REACTIVE ION ETCHING OF MULTI-LAYER RESIST.
- H.Y. Ng
- D.P. Klaus
- et al.
- 1986
- MRS Fall Meeting 1986
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED