Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
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5 results for N. Haddad
Temperature sensitivity of devices and circuits fabricated in fully depleted accumulation mode CMOS/SOI
- F.T. Brady
- N. Haddad
- et al.
- 1992
- IEEE International SOI Conference 1992
Hot-carrier reliability of fully depleted accumulation mode SOI MOSFETS
- A. Acovic
- L.K. Wang
- et al.
- 1992
- IEEE International SOI Conference 1992
Effect of total dose radiation on device self latch-up
- F.T. Brady
- N. Haddad
- et al.
- 1992
- IEEE International SOI Conference 1992
0.5 μm CMOS device design and characterization
- H.I. Hanafi
- M.R. Wordeman
- et al.
- 1987
- ESSDERC 1987