Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 KL.K. WangJ. Seliskaret al.1991IEDM 1991
A high-performance 0.5-μm BiCMOS technology with 3.3-V CMOS devicesEric D. JohnsonT.B. Hooket al.1990VLSI Technology 1990
0. 5 MICRON GATE CMOS TECHNOLOGY USING E-BEAM/OPTICAL MIX LITHOGRAPHY.L.K. WangY. Tauret al.1985VLSI Technology 1985