Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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32 results for H.Y. Ng
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Design of high performance PFETs with strained Si channel and laser anneal
- Z. Luo
- Y.F. Chong
- et al.
- 2005
- IEDM 2005
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay
- M. Hargrove
- S.W. Crowder
- et al.
- 1998
- IEDM 1998
A High-Density 6.9 sq. pm Embedded SRAM Cell in a High-Performance 0.25 μm-Generation CMOS Logic Technology
- S. Subbanna
- P. Agnello
- et al.
- 1996
- IEDM 1996
EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986