High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substratesChun-Yung SungHaizhou Yinet al.2005IEDM 2005
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
Interaction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliabilityK.Y. LimV. Chanet al.2005ESSDERC 2005
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakageE. GusevC. Cabral Jr.et al.2004IEDM 2004
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturingH.S. YangR. Maliket al.2004IEDM 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flowD.-G. ParkZ. Luoet al.2004VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodesV. NarayananA.C. Callegariet al.2004VLSI Technology 2004
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal OrientationsM. YangM. Ieonget al.2003IEDM 2003
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration schemeT. DaltonA. Cowleyet al.2003ADMETA 2003