Investigation of the DX center in heavily doped n-GaAs
- D.K. Maude
- J.C. Portal
- et al.
- 1987
- Physical Review Letters
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3 results for J.J. Harris
Pressure-dependent measurements on n+ GaAs (Si, Sn): The effect of deep donor (DX) states on the electrical properties and persistent photoconductivity
- T. Foster
- D.K. Maude
- et al.
- 2006
- Physica Scripta
Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs
- J.C. Portal
- D.K. Maude
- et al.
- 1988
- Superlattices and Microstructures