B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n+GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with SiGa. © 1988.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Lawrence Suchow, Norman R. Stemple
JES
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures