Use of SiBN and SiBON films prepared by plasma enhanced chemical vapor deposition from borazine as interconnection dielectrics
- W.F. Kone
- S. Cohen
- et al.
- 1997
- JES
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32 results for David B. Beach
The capacitance of Pt/Pb0.65La0.28Ti0.96O3/Pt structures
- T.M. Shaw
- R.B. Laibowitz
- et al.
- 1996
- Applied Physics Letters
Preparation of strontium titanate films by mocvd
- A. Grill
- W. Kane
- et al.
- 1995
- Integrated Ferroelectrics
Thickness dependent dielectric properties of sol-gel prepared lead lanthanum titanate films
- D.B. Beach
- R.B. Laibowitz
- et al.
- 1995
- Integrated Ferroelectrics
Chemical vapor deposition of highly conductive boron-doped graphite from triphenyl boron
- J. Kouvetakis
- M.W. McElfresh
- et al.
- 1994
- Carbon
Potential Si atomic layer epitaxy processes using halogenated Si precursors
- D.D. Koleske
- S. Gates
- et al.
- 1993
- Thin Solid Films
Growth of Si on Si(100) via H/Cl exchange and the effect of interfacial boron
- D.D. Koleske
- S. Gates
- et al.
- 1992
- Journal of Applied Physics
Diffusion effects and nucleation of thin film boron nitride growth from borazine on the Si(100) surface
- S. Gates
- C.M. Chiang
- et al.
- 1992
- Journal of Applied Physics
Low-temperature adsorption and decomposition of borazine on the Si(100)-(2 × 1) surface
- Chiang Chao-Ming
- Stephen M. Gates
- et al.
- 1992
- Surface Science
Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)
- D.D. Koleske
- S. Gates
- et al.
- 1992
- Applied Physics Letters