Stress development during the reactive formation of silicide films
- Olivier Thomas
- Patrice Gergaud
- et al.
- 2004
- DIMAT 2004
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25 results for O. Thomas
Dopant diffusion in silicides: Effect of diffusion paths
- Carol Stanis
- J.M. Cotte
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Some Titanium Germanium and Silicon Compounds: Reaction and Properties
- O. Thomas
- F.M. d' Heurle
- et al.
- 2011
- Journal of Materials Research
Reacted amorphous layers: Tantalum and niobium oxides
- O. Thomas
- F.M. D’Heurle
- et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Interfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si
- S.-E. Hörnström
- A. Charai
- et al.
- 2004
- Surface and Interface Analysis
Stresses during silicide formation: A review
- F.M. D'Heurle
- O. Thomas
- 1996
- Defect and Diffusion Forum
Diffusion of elements implanted in amorphous titanium disilicide
- F.M. d'Heurle
- J.M. Cotte
- et al.
- 1993
- Applied Surface Science
Electrical and optical properties of silicide single crystals and thin films
- F. Nava
- K.N. Tu
- et al.
- 1993
- Materials Science Reports
Diffusion of dopants in tungsten disilicide: effects of diffusion paths
- O. Thomas
- G. Scilla
- et al.
- 1991
- Applied Surface Science
The reaction of scandium thin films with silicon: diffusion, nucleation, resistivities
- O. Thomas
- C.S. Petersson
- et al.
- 1991
- Applied Surface Science