Electronic structure of Si(111)-B(s3 × s3) R30°studied by Si 2p and B 1s core-level photoelectron spectroscopy
- A.B. McLean
- L.J. Terminello
- et al.
- 1990
- Physical Review B
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22 results for A.B. McLean
Temperature effects on the formation of the Sb/InP(110) interface
- D.R.T. Zahn
- W. Richter
- et al.
- 1990
- Applied Surface Science
Si2Cl6and Si2H6adsorption on CaF2/Si(111)
- L.J. Terminello
- F.J. Himpsel
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Bonding at silicon/insulator interfaces
- F.J. Himpsel
- T.F. Heinz
- et al.
- 1990
- Applied Surface Science
Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)
- A.B. McLean
- L.J. Terminello
- et al.
- 1989
- Physical Review B
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface
- A.B. McLean
- F.J. Himpsel
- 1989
- Physical Review B
Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)
- A.B. Mclean
- 1989
- Surface Science
Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi
- A.B. McLean
- R.M. Feenstra
- et al.
- 1989
- Physical Review B
Surface core-level binding-energy shifts for the cleaved GaP(110) surface
- A.B. McLean
- R. Ludeke
- 1989
- Physical Review B
Band dispersion of an interface state: CaF2/Si(111)
- A.B. McLean
- F.J. Himpsel
- 1989
- Physical Review B