EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
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20 results for P.J. Wang
Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures
- P.J. Wang
- F. Fang
- et al.
- 1989
- Applied Physics Letters
High hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructures
- P.J. Wang
- B.S. Meyerson
- et al.
- 1989
- Applied Physics Letters
Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1988
- Applied Physics Letters
Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth
Gas phase and surface reactions in Si doping of GaAs by silanes
- Harry K. Moffat
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
The control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth