Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
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20 results for P.J. Wang
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
A low-temperature insulating phase at v = 1.5 for 2D holes in high-mobility Si-Si1-xGex heterostructures with Landau level degeneracy
- R.B. Dunford
- E.E. Mitchell
- et al.
- 1999
- Journal of Physics Condensed Matter
Effect of illumination on transport properties of the high mobility 2D hole gas in Si-SiGe heterostructures
- V.A. Stadnik
- E.E. Mitchell
- et al.
- 1998
- Physica B: Condensed Matter
Hall measurements of the insulating phases at υ = 1.5 and υ ∼ 0.5 in p-type Si/Si1-xGex heterostructures using pulsed magnetic fields
- E.E. Mitchell
- R.G. Clark
- et al.
- 1998
- Physica B: Condensed Matter
Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si1-xGex heterostructures
- R.B. Dunford
- R. Newbury
- et al.
- 1996
- Surface Science
Two-dimensional hole gas in Si/SiGe heterostructures
- F. Fang
- P.J. Wang
- et al.
- 1992
- Surface Science
Effect of strain in Si/SiGe modulation-doped quantum wells
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- Surface Science
Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters
High electron mobility in modulation-doped Si/SiGe
- K. Ismail
- B.S. Meyerson
- et al.
- 1991
- Applied Physics Letters