Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
20 results for P.J. Wang
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
A low-temperature insulating phase at v = 1.5 for 2D holes in high-mobility Si-Si1-xGex heterostructures with Landau level degeneracy
- R.B. Dunford
- E.E. Mitchell
- et al.
- 1999
- Journal of Physics Condensed Matter
Effect of illumination on transport properties of the high mobility 2D hole gas in Si-SiGe heterostructures
- V.A. Stadnik
- E.E. Mitchell
- et al.
- 1998
- Physica B: Condensed Matter
Hall measurements of the insulating phases at υ = 1.5 and υ ∼ 0.5 in p-type Si/Si1-xGex heterostructures using pulsed magnetic fields
- E.E. Mitchell
- R.G. Clark
- et al.
- 1998
- Physica B: Condensed Matter
Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si1-xGex heterostructures
- R.B. Dunford
- R. Newbury
- et al.
- 1996
- Surface Science
Two-dimensional hole gas in Si/SiGe heterostructures
- F. Fang
- P.J. Wang
- et al.
- 1992
- Surface Science
Effect of strain in Si/SiGe modulation-doped quantum wells
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- Surface Science
Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters
High electron mobility in modulation-doped Si/SiGe
- K. Ismail
- B.S. Meyerson
- et al.
- 1991
- Applied Physics Letters