Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates
- Y.D. Galeuchet
- P. Roentgen
- 1991
- Journal of Crystal Growth
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25 results for P. Roentgen
MOVPE of AlGaInP/GaInP heterostructures for visible lasers
- P. Roentgen
- W. Heuberger
- et al.
- 1991
- Journal of Crystal Growth
GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures
- Y.D. Galeuchet
- P. Roentgen
- et al.
- 1990
- Journal of Applied Physics
Fabrication and Optical Characterisation of First Order DFB GaInP/AlGaInP Laser Structures at 639 nm
- M. Korn
- T. Körfer
- et al.
- 1990
- Electronics Letters
Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Peter Roentgen
- et al.
- 1988
- Applied Physics Letters