A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
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Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers
- A. Hartstein
- N.F. Albert
- 1988
- Physical Review B