L.K. Wang, D.S. Wen, et al.
IEDM 1989
We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO 2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.
L.K. Wang, D.S. Wen, et al.
IEDM 1989
S.B. Kaplan, A. Hartstein
Physical Review B
A.A. Bright
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A.A. Bright, S. Kaushik, et al.
Journal of Applied Physics