A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length

Abstract

We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO 2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.