113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
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47 results for James H. Comfort
SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- J.N. Burghartz
- A.O. Cifuentes
- et al.
- 1993
- VLSI Technology 1993
A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices