A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
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47 results for James H. Comfort
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits
- C.T. Chuang
- Ken Chin
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
- S. Stiffler
- J.H. Comfort
- et al.
- 1991
- Journal of Applied Physics
Device design issues for a high-performance technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- Microelectronic Engineering