Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
- S.J. Wind
- J. Appenzeller
- et al.
- 2002
- Applied Physics Letters
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61 results for S.J. Wind
New polysilicon disposable sidewall process for sub-50 nm CMOS
- K.L. Lee
- D. Boyd
- et al.
- 2001
- ESSDERC 2001
Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
- Y. Watanabe
- J.G. Bednorz
- et al.
- 2001
- Applied Physics Letters
Very high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
Accuracy and efficiency in electron beam proximity effect correction
- S.J. Wind
- P.D. Gerber
- et al.
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Nanometer size platinum particle arrays: Catalytic and surface chemical properties
- P.W. Jacobs
- S.J. Wind
- et al.
- 1997
- Surface Science
X-ray lithography for ≤100 nm ground rules in complex patterns
- Scott Hector
- Victor Pol
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
CMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
Patterning of 100 nm features using X-ray lithography
- Azalia A. Krasnoperova
- Scott Hector
- et al.
- 1997
- J. Photopolym. Sci. Tech.