Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
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11 results for Kai-Yap Toh
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
23 ps/2.1 mW ECL gate
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1989
- ISSCC 1989
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
A low-power static frequency divider circuit in bipolar technology
- Kai Y. Toh
- Yen C. Tzeng
- et al.
- 1992
- BCTM 1992
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1990
- Bipolar Circuits and Technology Meeting 1990
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
The Design and Optimization of High-Performance, Double-Poly Self-Aligned p-n-p Technology
- Pong-Fei Lu
- James D. Warnock
- et al.
- 1991
- IEEE T-ED