Resonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrier
- S.S. Lu
- K. Lee
- et al.
- 1991
- Applied Physics Letters
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5 results for K. Lee
Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
- K. Beyzavi
- K. Lee
- et al.
- 1991
- Applied Physics Letters
Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Journal of Applied Physics
Excess current in n+GaAsAlxGa1-xAsnGaAs heterojunctions
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Surface Science
Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters