C.-J. Chen, Alan Lien, et al.
Journal of the Optical Society of America A: Optics and Image Science, and Vision
Oscillatory current-voltage characteristics of n+-GaAs/semi- insulating Al0.8Ga0.2As/nGaAs heterojunction barriers (400 Å thick) grown by molecular beam epitaxy on n+-GaAs (100) substrates are observed at 4 K when the heterostructures are placed under the transverse uniaxial stress along 〈011〉 direction (perpendicular to current direction) above 4 kbar. We attribute these oscillations to the resonant indirect Fowler-Nordheim tunneling via 〈011〉 oriented transverse X valleys, where the change of wave vector is required for tunneling.
C.-J. Chen, Alan Lien, et al.
Journal of the Optical Society of America A: Optics and Image Science, and Vision
J.C. Marinace, Alwin E. Michel, et al.
Proceedings of the IEEE
J.E. Smith Jr., M.H. Brodsky, et al.
Journal of Non-Crystalline Solids
Chin-An Chang, M. Heiblum, et al.
Applied Physics Letters