Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
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15 results for C.C.-H. Hsu
A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IRPS 1989
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters