Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous siliconYue KuoP. Kozlowski1996Applied Physics Letters
On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H filmsE.C. PalouraY. Kuoet al.1995Physica B: Physics of Condensed Matter
Thin-film transistors with multistep deposited amorphous silicon layersYue Kuo1995Applied Physics Letters
PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film Transistor Process and Device PerformanceYue Kuo1995JES