High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
58 results for E.F. Crabbé
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Reduction of RTA-driven intra-die variation via model-based layout optimization
- J.C. Scott
- O. Gluschenkov
- et al.
- 2009
- VLSI Technology 2009
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Super-halo asymmetric vertical pass transistor design for ultra-dense DRAM technologies
- D. Chidambarrao
- K. McStay
- et al.
- 2003
- VLSI-TSA 2003
On the retention time distribution of dual-channel vertical DRAM technologies
- J. Beintner
- Y. Li
- et al.
- 2003
- VLSI-TSA 2003
High-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects
- L. Su
- R. Schulz
- et al.
- 1998
- VLSI Technology 1998
Asymmetry in effective-channel length of n- and p-MOSFETs
- L.R. Logan
- Y. Taur
- et al.
- 1997
- SISPAD 1997