High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
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12 results for Phung T. Nguyen
65nm CMOS technology for low power applications
- A. Steegen
- R. Mo
- et al.
- 2005
- IEDM 2005
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
High performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006
Interaction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliability
- K.Y. Lim
- V. Chan
- et al.
- 2005
- ESSDERC 2005
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Scalability and biasing strategy for CMOS with active well bias
- S. Huang
- C. Wann
- et al.
- 2001
- VLSI Technology 2001
A comparative device and performance analysis between a SiGe epitaxial-base HBT and a si double-poly I/I BJT npn structure
- Mario M. Pelella
- Phung T. Nguyen
- et al.
- 1992
- BCTM 1992