Nucleation and growth of silicon on Si02 during SiH4 low pressure chemical vapor deposition as studied by hydrogen desorption titration
- M. Liehr
- S.S. Dana
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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8 results for M. Anderle
Thin-film transformations and volatile products in the formation of nanoporous low- k polymethylsilsesquioxane-based dielectric
- P. Lazzeri
- L. Vanzetti
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ToF-SIMS studies of nanoporous PMSSQ materials: Kinetics and reactions in the processing of low-K dielectrics for ULSI applications
- P. Lazzeri
- G.W. Rubloff
- et al.
- 2004
- Surface and Interface Analysis
Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
- I.A. Shareef
- G.W. Rubloff
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
- Cs. Szeles
- B. Nielsen
- et al.
- 1994
- Journal of Applied Physics
Chemical vapor deposition of rough-morphology silicon films over a broad temperature range
- S.S. Dana
- M. Anderle
- et al.
- 1993
- Applied Physics Letters
Anomalous diffusion of fluorine in silicon
- S.-P. Jeng
- T.P. Ma
- et al.
- 1992
- Applied Physics Letters
Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
- S.S. Dana
- M. Liehr
- et al.
- 1992
- Applied Physics Letters