M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (≥100°C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).
M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P. Lazzeri, L. Vanzetti, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P. Asoka-Kumar, T.C. Leung, et al.
Journal of Applied Physics
R.J. Purtell, P.S. Ho, et al.
Physica B+C