80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
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76 results for E. Gusev
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
- H.C. Lu
- E. Gusev
- et al.
- 2000
- Journal of Applied Physics
Structure and stability of ultrathin zirconium oxide layers on Si(001)
- M. Copel
- M. Gribelyuk
- et al.
- 2000
- Applied Physics Letters
High-resolution depth profiling in ultrathin Al2O3 films on Si
- E. Gusev
- M. Copel
- et al.
- 2000
- Applied Physics Letters
Ultrathin nitrided gate dielectrics by plasma-assisted processing
- E. Gusev
- D.A. Buchanan
- et al.
- 1999
- Microelectronic Engineering
Vacancy mechanism of the anomalous behavior of surface atoms at elevated temperatures
- Yu.N. Devyatko
- S.V. Rogozhkin
- et al.
- 1999
- Journal of Experimental and Theoretical Physics