L. Krusin-Elbaum, C. Cabral, et al.
Applied Physics Letters
A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with Al2O3 gate dielectric with equivalent electrical thickness in the sub-2 nm range. © 2000 American Institute of Physics.
L. Krusin-Elbaum, C. Cabral, et al.
Applied Physics Letters
E. Gusev, C. D'Emic, et al.
INFOS 2003
E. Gusev, E. Cartier, et al.
Microelectronic Engineering
M. Copel, M. Gribelyuk, et al.
Applied Physics Letters