Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
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4 results for R. Todi
Amorphous-SiCBN-based metal-semiconductor-metal photodetector for high-temperature applications
- Arun Vijayakumar
- Ravi M. Todi
- et al.
- 2007
- IEEE Electron Device Letters
Investigation of kink-induced excess RF channel noise in sub -50 nm PD-SOI MOSFETs
- Ninad S. Wadje
- Vijaya Bhaskara Neeli
- et al.
- 2010
- IEEE International SOI Conference 2010
Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich Si O2 films
- Oleksandr Savchyn
- Forrest R. Ruhge
- et al.
- 2007
- Physical Review B - CMMP