Embedded memory considerations in SOI
G. Wang, Carl Radens, et al.
IEEE International SOI Conference 2010
RF noise performance of PD-SOI MOSFETs at 40 nm gate length is reported. Using drift-diffusion transport, a good match between small signal measurements and simulations is obtained in presence of velocity saturation and impact ionization. Similar to bulk, PD-SOI also exhibits excess RF channel noise. A sharp rise in the channel noise parameter γ near the kink region in the DC I-V can be explained by a rise in the body potential due to floating body effect and consequent increase of the effective drain conductance at zero drain bias. ©2010 IEEE.
G. Wang, Carl Radens, et al.
IEEE International SOI Conference 2010
Phil Oldiges, Kenneth P. Rodbell, et al.
IEEE International SOI Conference 2010
Christophe Tretz, Chen Guo, et al.
IEEE International SOI Conference 2010
Puneet Goyal, Sneha Gupta, et al.
IEEE International SOI Conference 2010