Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Publications
Date
Featured collections
Popular topics
68 results for Bruce Doris
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
High-Q magnetic inductors for high efficiency on-chip power conversion
- Naigang Wang
- Bruce Doris
- et al.
- 2016
- IEDM 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
- Bruce Doris
- B. Desalvo
- et al.
- 2016
- Solid-State Electronics
Vertical Slit FET at 7-nm Node and beyond
- Ping-Lin Yang
- Terence B. Hook
- et al.
- 2016
- IEEE T-ED
Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
- Harold Hughes
- Patrick McMarr
- et al.
- 2015
- REDW/NSREC 2015
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that?
- Bruce Doris
- Terence B. Hook
- 2015
- ESSDERC 2015
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015