Competitive and cost effective high-k based 28nm CMOS technology for low power applicationsF. ArnaudA. Theanet al.2009IEDM 2009
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devicesJ.-P. HanH. Utomoet al.2006IEDM 2006
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyondD.-G. ParkK. Steinet al.2009VLSI-TSA 2009
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first processX. ChenS. Samavedamet al.2008VLSI Technology 2008
Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technologyXiaobin YuanJae-Eun Parket al.2007IIRW 2007
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006
Gate-induced-drain-leakage current in 45-nm CMOS technologyXiaohin YuanJae-Eun Parket al.2008IEEE T-DMR