Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
- S. Reboh
- V. Boureau
- et al.
- 2019
- IEDM 2019
Publications
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8 results for R. Muthinti
Air spacer for 10nm FinFET CMOS and beyond
- K. Cheng
- C. Park
- et al.
- 2016
- IEDM 2016
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
An OCD perspective of line edge and line width roughness metrology
- Ravi Bonam
- R. Muthinti
- et al.
- 2017
- SPIE Advanced Lithography 2017
Comprehensive analysis of line-edge and line-width roughness for EUV lithography
- Ravi Bonam
- Chi Chun Liu
- et al.
- 2017
- SPIE Advanced Lithography 2017
Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- R. Muthinti
- Nicolas Loubet
- et al.
- 2016
- SPIE Advanced Lithography 2016
Advanced in-line metrology strategy for self-aligned quadruple patterning
- Robin Chao
- Mary Breton
- et al.
- 2016
- SPIE Advanced Lithography 2016