High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
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Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008