Crystallization characteristics of Ge-Sb phase change materials
- Simone Raoux
- Cyril Cabrai Jr.
- et al.
- 2009
- MRS Spring Meeting 2009
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10 results for Cyril Cabrai Jr.
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Thermal stress evaluation of a PCRAM material Ge2Sb 2Te5
- K.N. Chen
- L. Krusin-Elbaum
- et al.
- 2006
- NVSMW 2006
Influence of alloying elements on the formation and stability of NiSi
- C. Detavernier
- D. Deduytsche
- et al.
- 2006
- ECS Meeting 2006
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
Reactive diffusion in the Ni-Si system: Phase sequence and formation of metal-rich phases
- C. Lavoie
- C. Coia
- et al.
- 2004
- DIMAT 2004
Preparation of SrRuO3 films for advanced CMOS metal gates
- K. Fröhlich
- K. Hušeková
- et al.
- 2004
- Materials Science in Semiconductor Processing
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Interdiffusion studies of single crystal TiN/NbN superlattice thin films
- C. Engström
- J. Birch
- et al.
- 1999
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Noble metal suicide formation in metal/Si structures during oxygen annealing: Implications for perovskite-based memory devices
- K.L. Saenger
- A. Grill
- et al.
- 1998
- Journal of Materials Research