Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

Abstract

Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive Ion/Ioff and adjustable Vt. Six suicide gate materials are presented, as well as two silicide workfunction engineering methods.