L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive Ion/Ioff and adjustable Vt. Six suicide gate materials are presented, as well as two silicide workfunction engineering methods.