SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT
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18 results for Jae-Sung Rieh
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Sige HBT performance and reliability trends through fT of 350GHz
- Greg Freeman
- Jae-Sung Rieh
- et al.
- 2003
- IRPS 2003
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
40-Gb/s circuits built from a 120-GHz f T SiGe technology
- Greg Freeman
- Mounir Meghelli
- et al.
- 2002
- IEEE Journal of Solid-State Circuits
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers