Fan Jing Meng, Ying Huang, et al.
ICEBE 2007
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.
Fan Jing Meng, Ying Huang, et al.
ICEBE 2007
Nanda Kambhatla
ACL 2004
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Hendrik F. Hamann
InterPACK 2013