Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
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15 results for Scott Crowder
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006
Process induced stress for CMOS performance improvement
- S. Fang
- S.S. Tan
- et al.
- 2006
- ICSICT 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- T. Dalton
- A. Cowley
- et al.
- 2003
- ADMETA 2003
1GHz fully pipelined 3.7ns Address access time 8kx1024 embedded DRAM macro
- O. Takahashi
- S. Dhong
- et al.
- 2000
- ISSCC 2000
Controlling floating-body effects for 0.13μm and 0.10μm SOI CMOS
- S.K.H. Fung
- N. Zamdmer
- et al.
- 2000
- IEDM 2000
1-GHz fully pipelined 3.7-ns address access time 8 k × 1024 embedded synchronous DRAM macro
- Osamu Takahashi
- Sang H. Dhong
- et al.
- 2000
- IEEE Journal of Solid-State Circuits
Sub-60 nm physical gate length SOI CMOS
- I.Y. Yang
- K. Chen
- et al.
- 1999
- IEDM 1999