Reliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar TransistorsJoachim N. BurghartzYuh-Jier Mii1993IEEE Electron Device Letters
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate OxideYuan TaurS. Cohenet al.1993IEEE Electron Device Letters