Matt Wetzel, Leathen Shi, et al.
IEEE Microwave and Guided Wave Letters
Paper
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
Abstract
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
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