Conference paper
Ultra-low power 0.1 μm CMOS
Y. Mii, S.J. Wind, et al.
VLSI Technology 1994
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
Y. Mii, S.J. Wind, et al.
VLSI Technology 1994
Yuan Taur, Yuh-Jier Mii, et al.
IEEE Electron Device Letters
S.J. Wind, R. Martel, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Clement Wann, Fariborz Assaderaghi, et al.
IEEE Electron Device Letters