D. Kern, K.Y. Lee, et al.
Japanese Journal of Applied Physics
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
D. Kern, K.Y. Lee, et al.
Japanese Journal of Applied Physics
Yuan Taur, Tak H. Ning
Materials Chemistry and Physics
P. Santhanam, C.C. Chi, et al.
Physical Review Letters
W. Chen, Y. Taur, et al.
VLSI Technology 1996